PBSS4160K Philips Semiconductors, PBSS4160K Datasheet - Page 5

• Manufacturer Part Number: PBSS4160K
• Description: 1 A NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
7. Characteristics
Table 7:
T
[1]
9397 750 12702
Objective data sheet
Symbol
I
I
I
h
V
V
R
V
f
C
CBO
CES
EBO
T
j
FE
CEsat
BEsat
BEon
CEsat
c
= 25 C unless otherwise specified.
Pulse test: t
Characteristics
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
equivalent
on-resistance
base-emitter turn-on
voltage
transition frequency
collector capacitance
p
300 s;
0.02.
Conditions
V
V
V
V
V
V
V
I
I
I
I
I
V
I
f = 100 MHz
V
f = 1 MHz
C
C
C
C
C
C
CB
CB
CE
EB
CE
CE
CE
CE
CB
= 100 mA; I
= 500 mA; I
= 1 A; I
= 1 A; I
= 1 A; I
= 50 mA; V
= 5 V; I
= 60 V; I
= 60 V; I
= 60 V; V
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 10 V; I
B
B
B
= 100 mA
= 50 mA
= 100 mA
C
C
C
C
C
E
E
E
= 0 A
= 1 mA
= 500 mA
= 1 A
= 1 A
Rev. 01 — 29 April 2004
BE
CE
B
B
= 0 A
= 0; T
= I
= 1 mA
= 50 mA
= 0 V
= 10 V;
e
= 0 A;
j
= 150 C
[1]
[1]
[1]
[1]
60 V, 1 A NPN low V
Min
-
-
-
-
250
200
100
-
-
-
-
-
-
150
-
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Typ
-
-
-
-
<tbd>
<tbd>
<tbd>
<tbd>
<tbd>
<tbd>
<tbd>
<tbd>
<tbd>
220
5.5
PBSS4160K
CEsat
Max
100
50
100
100
-
-
-
110
150
280
1.1
280
0.9
-
10
www.DataSheet4U.com
(BISS) transistor
Unit
nA
nA
nA
mV
mV
mV
V
m
V
MHz
pF
A
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