PBSS4160T Philips Semiconductors, PBSS4160T Datasheet - Page 4

• Manufacturer Part Number: PBSS4160T
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and 1 cm
3. Operated under pulsed conditions: duty cycle
2004 May 12
R
SYMBOL
th(j-a)
60 V, 1 A
NPN low V
Mounted on printed-circuit board; standard footprint.
handbook, full pagewidth
(K/W)
Z th
10
10
10
10
1
3
2
5
thermal resistance from junction to
ambient
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
1
CEsat
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
10
PARAMETER
4
(BISS) transistor
10
3
10
2
in free air; note 1
in free air; note 2
in free air; notes 1 and 3
20%, pulse width t
4
10
CONDITIONS
1
p
1
10 ms.
10
VALUE
465
312
100
2
collector mounting pad.
10
PBSS4160T
Product specification
2
t p (s)
MLE127
UNIT
K/W
K/W
K/W
10
3