PBSS4160T Philips Semiconductors, PBSS4160T Datasheet - Page 7

• Manufacturer Part Number: PBSS4160T
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
2004 May 12
handbook, halfpage
60 V, 1 A
NPN low V
T
(1) I
(2) I
(3) I
(4) I
Fig.10 Collector current as a function of
amb
(A)
1.6
1.2
0.8
0.4
I C
B
B
B
B
= 25 C.
2
0
= 60 mA.
= 54 mA.
= 48 mA.
= 42 mA.
0
collector-emitter voltage; typical values.
1
CEsat
(6)
(5) I
(6) I
(7) I
(8) I
(5)
2
B
B
B
B
(4)
(BISS) transistor
= 36 mA.
= 30 mA.
= 24 mA.
= 18 mA.
(3)
3
(2)
(10)
(1)
(7)
(8)
(9)
(9) I
(10) I
4
V CE (V)
B
B
MLE131
= 12 mA.
= 6 mA.
5
7
handbook, halfpage
R CEsat
I
(1) T
Fig.11 Equivalent on-resistance as a function of
C
/I
( )
B
10
10
10
= 20.
10
amb
10
1
3
2
1
= 100 C.
1
collector current; typical values.
1
(2) T
10
amb
(2)
= 25 C.
10
(1)
(3)
2
PBSS4160T
Product specification
10
(3) T
3
I C (mA)
MLE132
amb
= 55 C.
10
4