PBSS5160K NXP Semiconductors, PBSS5160K Datasheet

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PBSS5160K

Manufacturer Part Number
PBSS5160K
Description
60V 1A PNP low VCEsat (BISS) transistor
Manufacturer
NXP Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBSS5160K
Manufacturer:
NXP/恩智浦
Quantity:
20 000
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
PNP low V
SOT346 (SC-59A) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4160K.
I
I
I
I
I
I
I
I
I
I
Table 1.
[1]
[2]
Symbol
V
I
I
R
C
CM
CEO
CEsat
PBSS5160K
60 V, 1 A PNP low V
Rev. 03 — 6 October 2008
Low collector-emitter saturation voltage V
High collector current capability I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
High voltage DC-to-DC conversion
High voltage MOSFET gate driving
High voltage motor control
High voltage power switches (e.g. motors, fans)
Automotive applications
Device mounted on a ceramic PCB, Al
Pulse test: t
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter saturation
resistance
p
Breakthrough In Small Signal (BISS) transistor in a small
300 s;
0.02.
CEsat
FE
) at high I
2
O
C
3
(BISS) transistor
, standard footprint.
and I
Conditions
open base
single pulse;
t
I
I
p
C
B
= 100 mA
= 1 A;
1 ms
CM
C
CEsat
[1]
[2]
Min
-
-
-
-
Typ
-
-
-
255
www.DataSheet4U.com
Product data sheet
Max
340
60
1
2
Unit
V
A
A
m

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PBSS5160K Summary of contents

Page 1

... PBSS5160K PNP low V Rev. 03 — 6 October 2008 1. Product profile 1.1 General description PNP low V SOT346 (SC-59A) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160K. 1.2 Features I Low collector-emitter saturation voltage V I High collector current capability I I High collector current gain (h I High effi ...

Page 2

... amb Rev. 03 — 6 October 2008 PBSS5160K www.DataSheet4U.com PNP low V (BISS) transistor CEsat Simplified outline Graphic symbol ...

Page 3

... P tot (1) (W) 0.4 (2) 0.3 (3) 0.2 0 standard footprint 2 3 Power derating curves Rev. 03 — 6 October 2008 PBSS5160K www.DataSheet4U.com PNP low V (BISS) transistor CEsat Min Max - 150 65 +150 65 +150 006aaa497 80 120 160 amb 2 © NXP B.V. 2008. All rights reserved. ...

Page 4

... Thermal characteristics Parameter Conditions thermal resistance from in free air junction to ambient thermal resistance from junction to solder point O , standard footprint Rev. 03 — 6 October 2008 PBSS5160K www.DataSheet4U.com PNP low V (BISS) transistor CEsat Min Typ Max [ 500 [ 357 [ ...

Page 5

... Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5160K_3 Product data sheet Rev. 03 — 6 October 2008 PBSS5160K www.DataSheet4U.com PNP low V (BISS) transistor CEsat 006aaa499 (s) p 006aaa500 ...

Page 6

... 100 MHz collector capacitance MHz 300 s; 0.02. p Rev. 03 — 6 October 2008 PBSS5160K www.DataSheet4U.com PNP low V (BISS) transistor CEsat Min Typ = ...

Page 7

... Fig 6. 006aaa476 1.1 V BEsat (V) 0.9 0.7 0.5 0.3 0 (mA) C (1) T (2) T (3) T Fig 8. Rev. 03 — 6 October 2008 PBSS5160K www.DataSheet4U.com PNP low V (BISS) transistor CEsat 006aaa478 I (mA) = 35.0 B 31.5 28.0 24.5 21 amb Collector current as a function of collector-emitter voltage; typical values 006aaa477 ...

Page 8

... R CEsat ( ) (mA) C (1) I (2) I (3) I Fig 12. Collector-emitter saturation resistance as a Rev. 03 — 6 October 2008 PBSS5160K www.DataSheet4U.com PNP low V (BISS) transistor CEsat 006aaa480 (1) (2) ( amb /I = 100 ...

Page 9

... (probe) oscilloscope 450 open 100 ; R C Bon Boff Rev. 03 — 6 October 2008 PBSS5160K www.DataSheet4U.com PNP low V (BISS) transistor CEsat input pulse (idealized waveform) I (100 %) Bon I Boff output pulse (idealized waveform ...

Page 10

... For further information and the availability of packing methods, see PBSS5160K_3 Product data sheet 3.1 2.7 3 3.0 1.7 2.5 1.3 1 1.9 Dimensions in mm Packing methods Description SOT346 4 mm pitch tape and reel Rev. 03 — 6 October 2008 PBSS5160K www.DataSheet4U.com PNP low V (BISS) transistor CEsat 1.3 1.0 0.6 0.2 2 0.50 0.26 0.35 0.10 04-11-11 [1] Packing quantity 3000 ...

Page 11

... Rev. 03 — 6 October 2008 PBSS5160K www.DataSheet4U.com PNP low V (BISS) transistor CEsat solder lands solder resist solder paste 1.9 occupied area Dimensions in mm solder lands 2.9 solder resist occupied area Dimensions in mm preferred transport direction during soldering © NXP B.V. 2008. All rights reserved. ...

Page 12

... Data sheet status Product data sheet 9: amended information”: updated Product data sheet Objective data sheet Rev. 03 — 6 October 2008 PBSS5160K www.DataSheet4U.com PNP low V (BISS) transistor CEsat Change notice Supersedes - PBSS5160K_2 - PBSS5160K_1 - - © NXP B.V. 2008. All rights reserved ...

Page 13

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 03 — 6 October 2008 PBSS5160K www.DataSheet4U.com PNP low V (BISS) transistor CEsat © NXP B.V. 2008. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PBSS5160K_3 (BISS) transistor All rights reserved. Date of release: 6 October 2008 ...

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