PBSS5250T Philips Semiconductors, PBSS5250T Datasheet - Page 2

• Manufacturer Part Number: PBSS5250T
• Description: PNP low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

FEATURES
APPLICATIONS
DESCRIPTION
PNP BISS transistor in a SOT23 plastic package offering
ultra low V
MARKING
Note
1. * = p: Made in Hong Kong.
PBSS5250T
Philips Semiconductors
ORDERING INFORMATION
2003 Oct 09
Low collector-emitter saturation voltage V
High collector current capability: I
Higher efficiency leading to less heat generation
Reduced printed-circuit board requirements
Cost effective alternative to MOSFETs in specific
applications.
Power management
– DC/DC converters
– Supply line switching
– Battery charger
– LCD backlighting
Peripheral drivers
– Driver in low supply voltage applications (e.g. lamps
– Inductive load driver (e.g. relays, buzzers and motors).
PBSS5250T
TYPE NUMBER
* = t: Made in Malaysia.
* = W: Made in China.
50 V, 2 A
PNP low V
and LEDs)
TYPE NUMBER
CEsat
and R
CEsat
CEsat
parameters.
NAME
(BISS) transistor
MARKING CODE
C
and I
3H*
plastic surface mounted package; 3 leads
CM
CEsat
(1)
2
QUICK REFERENCE DATA
PINNING
handbook, halfpage
DESCRIPTION
SYMBOL
V
I
I
R
C
CM
CEO
CEsat
PACKAGE
PIN
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
Top view
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
base
emitter
collector
1
PARAMETER
3
DESCRIPTION
2
MAM256
Product specification
PBSS5250T
1
150
MAX. UNIT
VERSION
50
2
3
SOT23
3
2
m
V
A
A