PBSS5250T Philips Semiconductors, PBSS5250T Datasheet - Page 3

• Manufacturer Part Number: PBSS5250T
• Description: PNP low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm
2003 Oct 09
V
V
V
I
I
I
P
T
T
T
R
SYMBOL
SYMBOL
C
CM
B
j
amb
stg
CBO
CEO
EBO
tot
th j-a
50 V, 2 A
PNP low V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
junction temperature
operating ambient temperature
storage temperature
thermal resistance from junction to ambient
CEsat
PARAMETER
(BISS) transistor
PARAMETER
open emitter
open base
open collector
single peak
T
T
amb
amb
3
25 C; note 1
25 C; note 2
CONDITIONS
in free air; note 1
in free air; note 2
CONDITIONS
65
65
MIN.
VALUE
417
260
300
480
150
+150
+150
PBSS5250T
Product specification
50
50
5
2
3
300
MAX.
UNIT
K/W
K/W
V
V
V
A
A
mA
mW
mW
C
C
C
UNIT
2
2
.
.