PBSS5250T Philips Semiconductors, PBSS5250T Datasheet - Page 4

• Manufacturer Part Number: PBSS5250T
• Description: PNP low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2003 Oct 09
I
I
h
V
R
V
V
f
C
SYMBOL
j
CBO
EBO
T
FE
CEsat
BEsat
BEon
= 25 C; unless otherwise specified.
CEsat
c
50 V, 2 A
PNP low V
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
CEsat
300 s;
PARAMETER
(BISS) transistor
0.02.
f = 100 MHz
V
V
V
V
V
V
I
I
I
I
I
V
I
V
C
C
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CB
= 0.5 A; I
= 1 A; I
= 2 A; I
= 2 A; I
= 2 A; I
= 100 mA; V
= 50 V; I
= 50 V; I
= 5 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
B
B
B
B
CONDITIONS
4
= 50 mA
= 100 mA
= 200 mA; note 1
= 100 mA; note 1
C
C
C
C
B
C
E
E
E
= 0
= 50 mA
= 0.5 A
= 1 A; note 1
= 2 A; note 1
= 1 A; note 1
= 0
= 0; T
= I
CE
e
= 5 V;
= 0; f = 1 MHz
j
= 150 C
200
200
130
100
MIN.
1.2
TYP.
PBSS5250T
Product specification
150
35
MAX.
100
50
100
90
180
300
1.1
nA
nA
mV
mV
mV
m
V
V
MHz
pF
UNIT
A