PBSS5480X Philips Semiconductors, PBSS5480X Datasheet - Page 3

• Manufacturer Part Number: PBSS5480X
• Description: PNP low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2. Operated under pulsed conditions; pulse width t
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated, standard footprint.
4. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm
5. Device mounted on a 7 cm
2004 Nov 08
V
V
V
I
I
I
I
I
P
T
T
T
SYMBOL
C
CM
CRP
B
BM
stg
j
amb
CBO
CEO
EBO
tot
80 V, 4 A
PNP low V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
repetitive peak collector current
base current (DC)
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
CEsat
PARAMETER
(BISS) transistor
2
ceramic printed-circuit board, 1 cm
open emitter
open base
open collector
note 1
t
t
t
T
p
p
p
p
amb
notes 2 and 3
note 3
note 4
note 1
note 5
10 ms; duty cycle
1 ms or limited by T
10 ms;
1 ms
3
25 C
CONDITIONS
0.1
2
single-sided copper, tin-plated.
j(max)
0.1.
65
65
MIN.
2.5
0.55
1
1.4
1.6
+150
150
+150
PBSS5480X
Product specification
80
80
5
4
10
6
1
2
MAX.
V
V
V
A
A
A
A
A
W
W
W
W
W
C
C
C
2
2
UNIT
.
.