PBSS5480X Philips Semiconductors, PBSS5480X Datasheet - Page 8

• Manufacturer Part Number: PBSS5480X
• Description: PNP low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
2004 Nov 08
80 V, 4 A
PNP low V
(1) I
(2) I
(3) I
(4) I
Fig.6
V
(1) T
(2) T
(3) T
Fig.8
h
CE
(A)
I
FE
C
600
400
200
= 2 V.
10
B
B
B
B
8
6
4
2
0
0
amb
amb
amb
10
= 300 mA.
= 270 mA.
= 240 mA.
= 210 mA.
0
= 100 C.
= 25 C.
= 55 C.
Collector current as a function of
collector-emitter voltage; typical values.
1
DC current gain as a function of collector
current; typical values.
0.4
1
CEsat
(5) I
(6) I
(7) I
0.8
B
B
B
10
= 180 mA.
= 150 mA.
= 120 mA.
(BISS) transistor
(4)
10
1.2
(1)
(2)
(3)
(3)
2
(8) I
(9) I
(10) I
(2)
10
1.6
001aaa753
(10)
001aaa755
B
B
B
(1)
(5)
(6)
(7)
(8)
(9)
V
3
I
C
CE
= 90 mA.
= 60 mA.
= 30 mA.
(mA)
(V)
10
2
4
8
R
V
(1) T
(2) T
(3) T
Fig.7
I
(1) T
(2) T
(3) T
Fig.9
C
V
CEsat
CE
(V)
( )
/I
10
10
BE
B
10
10
1.2
0.8
0.4
= 2 V.
10
= 20.
1
0
amb
amb
amb
3
2
1
2
amb
amb
amb
10
10
= 55 C.
= 25 C.
= 100 C.
= 100 C.
= 25 C.
= 55 C.
1
Base-emitter voltage as a function of
collector current; typical values.
1
Equivalent on-resistance as a function of
collector current; typical values.
1
1
10
10
(1)
(2)
(3)
10
10
(2)
2
2
PBSS5480X
Product specification
10
10
001aaa754
(3)
(1)
001aaa756
3
I
3
I
C
C
(mA)
(mA)
10
10
4
4