PBSS5480X Philips Semiconductors, PBSS5480X Datasheet - Page 9
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PBSS5480X
Manufacturer Part Number
PBSS5480X
Description
PNP low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet
1.PBSS5480X.pdf
(13 pages)
Philips Semiconductors
2004 Nov 08
80 V, 4 A
PNP low V
V
V
I
(1) T
(2) T
(3) T
Fig.10 Collector-emitter saturation voltage as a
I
(1) T
(2) T
(3) T
Fig.12 Base-emitter saturation voltage as a
C
C
CEsat
BEsat
(V)
(V)
/I
/I
10
10
B
B
1.2
0.8
0.4
= 20.
= 20.
1
1
2
0
amb
amb
amb
amb
amb
amb
10
10
= 100 C.
= 25 C.
= 55 C.
= 55 C.
= 25 C.
= 100 C.
1
function of collector current; typical values.
1
function of collector current; typical values.
1
1
CEsat
10
10
(BISS) transistor
(2)
10
10
(1)
(3)
(1)
(2)
(3)
2
2
10
10
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3
I
I C (mA)
3
C
(mA)
10
10
4
4
9
V
T
(1) I
(2) I
(3) I
Fig.11 Collector-emitter saturation voltage as a
V
T
Fig.13 Base-emitter turn-on voltage as a function
CEsat
amb
amb
(V)
BEon
(V)
10
10
10
1.2
0.8
0.4
C
C
C
= 25 C.
= 25 C; V
1
0
1
2
3
/I
/I
/I
10
10
B
B
B
= 100.
= 50.
= 10.
1
function of collector current; typical values.
1
of collector current; typical values.
CE
1
1
= 2 V.
10
10
(1)
(2)
(3)
10
10
2
2
PBSS5480X
Product specification
10
10
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001aaa760
3
I
3
I
C
C
(mA)
(mA)
10
10
4
4