PBSS8110T Philips Semiconductors, PBSS8110T Datasheet - Page 3

• Manufacturer Part Number: PBSS8110T
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated, standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2003 Dec 22
handbook, halfpage
V
V
V
I
I
I
P
T
T
T
SYMBOL
C
CM
B
j
amb
stg
CBO
CEO
EBO
tot
100 V, 1 A
NPN low V
(1) FR4 PCB; 1 cm
(2) Standard footprint.
(mW)
P tot
500
400
300
200
100
0
0
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
junction temperature
operating ambient temperature
storage temperature
Fig.2 Power derating curves.
40
2
CEsat
copper mounting pad for collector.
PARAMETER
(1)
(2)
(BISS) transistor
80
120
T amb ( C)
MLE354
160
open emitter
open base
open collector
limited by T
T
T
amb
amb
3
25 C; note 1
25 C; note 2
CONDITIONS
j max
65
65
MIN.
120
100
5
1
3
300
300
480
150
+150
+150
PBSS8110T
Product specification
MAX.
V
V
V
A
A
mA
mW
mW
C
C
C
2
.
UNIT