PBSS8110T Philips Semiconductors, PBSS8110T Datasheet - Page 8

• Manufacturer Part Number: PBSS8110T
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
2003 Dec 22
handbook, halfpage
100 V, 1 A
NPN low V
V
V BEsat
I
T
Fig.9
I
T
Fig.11 Base-emitter saturation voltage as a
CEsat
C
C
(V)
amb
amb
/I
/I
(V)
10
10
B
B
10
10
= 50.
= 20.
= 25 C.
= 25 C.
10
10
1
1
2
10
1
1
1
Collector-emitter saturation voltage as a
function of collector current; typical values.
1
function of collector current; typical values.
1
1
CEsat
10
10
(BISS) transistor
10
10
2
2
10
10
I
3
C
3
I C (mA)
(mA)
MLE364
mle357
10
10
4
4
8
handbook, halfpage
handbook, halfpage
V BEsat
V BEsat
I
(1) T
(2) T
(3) T
Fig.10 Base-emitter saturation voltage as a
I
T
Fig.12 Base-emitter saturation voltage as a
C
C
amb
/I
/I
(V)
(V)
B
10
B
10
= 10.
= 50.
= 25 C.
10
amb
amb
amb
10
10
1
1
1
1
= 55 C.
= 25 C.
= 100 C.
1
1
function of collector current; typical values.
function of collector current; typical values.
(1)
(2)
(3)
10
1
10
10
10
10
2
2
PBSS8110T
Product specification
10
10
3
3
I C (mA)
I C (mA)
MLE363
MLE365
10
10
4
4