EC2612 United Monolithic Semiconductors, EC2612 Datasheet

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EC2612

Manufacturer Part Number
EC2612
Description
40GHz Super Low Noise PHEMT
Manufacturer
United Monolithic Semiconductors
Datasheet

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Description
The EC2612 is based on a 0.15µm gate
pseudomorphic high electron mobility
transistor (0.15µm PHEMT) technology.
Gate width is 120µm and the 0.15µm
T-shaped aluminium gate features low
resistance and excellent reliability.
The device shows a very high
transconductance which leads to very high
frequency and low noise performances.
It is available in chip form with sources via
holes connection.Only gate and drain wires
bounding are required.
Main Features
¦ 0.8dB minimum noise figure @ 18GHz
¦ 1.5dB minimum noise figure @ 40GHz
¦ 12dB associated gain @ 18GHz
¦ 9.5dB associated gain @ 40GHz
Main Characteristics
Tamb = +25°C
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Electrical Characteristics
Tamb = +25°C
Symbol
NFmin
Idss
Ref. : DSEC26120077 -17-Marc-00
Ga
Saturated drain current
Minimum noise figure (F=40GHz)
Associated gain (F=40GHz)
Pseudomorphic High Electron Mobility Transistor
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
40GHz Super Low Noise PHEMT
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
United Monolithic Semiconductors S.A.S.
Parameter
1/8
¦ Chip size : 0.63 x 0.37 x 0.1 mm
Specifications subject to change without notice
Min
10
8
D: Drain
G: Gate
S: Source
Typ
1.5
9.5
40
Max
EC2612
1.9
60
Unit
mA
dB
dB

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EC2612 Summary of contents

Page 1

... Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm PHEMT) technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low resistance and excellent reliability. ...

Page 2

... Operating channel temperature Tstg Storage temperature range (1) Operation of this device above any one of these parameters may cause permanent damage Ref. : DSEC26120077 -17-Marc-00 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 40GHz Super Low Noise PHEMT Test ...

Page 3

... Tamb = +25°C Ref. : DSEC26120077 -17-Marc-00 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 S12 S12 S21 dB /° dB -34,26 81,5 15,88 -28,41 76,1 15,69 -25,12 70,0 15,48 -22,92 64,0 15,20 -21,36 58,1 14,87 -20,14 52,2 14,53 -19,30 46,4 14,16 -18,69 42,0 13,74 -18,10 38,0 13,34 -17,61 33,5 12,96 -17,23 29,4 12,57 -16,88 25,8 12,23 -16,56 22,1 11,83 -16,35 18,7 11,40 -16,23 15,4 ...

Page 4

... Ref. : DSEC26120077 -17-Marc-00 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 40GHz Super Low Noise PHEMT S12 S12 S21 dB /° dB -33,67 82,3 13,52 -27,77 77,0 13,38 -24,45 71,2 13,22 -22,20 65,4 13,01 -20,57 59,6 12,74 -19,27 53,7 12,48 -18,36 47,9 12,19 -17,68 43,3 11,85 -17,04 39,2 11,51 -16,49 34,5 11,19 -16,08 30,1 10,85 ...

Page 5

... Ref. : DSEC26120077 -17-Marc-00 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Ids vs Vds (Vgs=-0.2V/Step) Vgs=0.4V 1 1,5 2 Vds (V) Nf and Associated Gain Vs Ids (F=12GHz Ids (mA) Vds = 2V NF and Associated Gain vs Ids (F=40GHz) ...

Page 6

... Ref. : DSEC26120077 -17-Marc-00 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 40GHz Super Low Noise PHEMT NF and Associated Gain vs F (Ids=Idss/ Frequency (GHz) Vds=2V F=12GHz 6,0 8,0 10,0 12,0 Pout (dBm) Vds = 3V, Ids = 31mA 6/8 Specifications subject to change without notice ...

Page 7

... Ref. : DSEC26120077 -17-Marc-00 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Parameter Cgs Cds Cgd Tau ...

Page 8

... United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSEC26120077 -17-Marc-00 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 40GHz Super Low Noise PHEMT Drain area= 60*60 µ ...

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