CHA7012 United Monolithic Semiconductors, CHA7012 Datasheet

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CHA7012

Manufacturer Part Number
CHA7012
Description
X-band HBT High Power Amplifier
Manufacturer
United Monolithic Semiconductors
Datasheet

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Part Number
Manufacturer
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Part Number:
CHA7012
Manufacturer:
UMS
Quantity:
1 400
Part Number:
CHA7012-99F
Manufacturer:
UMS
Quantity:
20 000
www.DataSheet4U.com
The CHA7012 chip is a monolithic two-
stage GaAs high power amplifier designed
for X band applications.
This device is manufactured using a GaInP
HBT process, including, via holes through
the substrate and air bridge. A nitride layer
protects the transistors and the passive
components.
techniques are implemented to guarantee
high reliability.
To simplify the assembly process:
-the backside of the chip is both RF and
DC grounded
-bond pads and back side are gold plated
for compatibility with eutectic die attach
method
thermocompression bonding process.
Description
Main Features
Main Characteristics
Vc=7.5V, Ic (Quiescent) = 1.9A, Pulse width=100µs, Duty cycle = 20%
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
Symbol
P_3dBc
Ref. : DSCHA70127235 - 23 Aug 07
Psat
Fop
-VDigital control thanks to TTL interface
-VAnalog control thanks to biasing
circuit
Top
Frequency band : 9.2 -10.4GHz
Output power (P3dB ): 38.5dBm
High linear gain: > 20dB
High PAE: > 38%
Two biasing modes:
Chip size
G
and
Operating frequency range
Saturated output power @ 25° C
Output power @ 3dBc @ 25° C
Small signal gain @ 25° C
Operating temperature range
:
Special
5.00 x 3.68 x 0.1mm
X-band HBT High Power Amplifier
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
thermosonic
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
heat
GaAs Monolithic Microwave IC
United Monolithic Semiconductors S.A.S.
Parameter
removal
or
1/10
Pout & PAE @3dBc and Linear Gain (Temperature 25°C)
44
40
36
32
28
24
20
1 6
9
IN
IN
Specifications subject to change without notice
9.2
Min
TI
TI
9.2
-40
TI
TI
Circuit
Circuit
Vc
Vc
Circuit
Circuit
Vc
Vc
TTL
TTL
9.4
TTL
TTL
TO
TO
TO
TO
Frequency ( G H z)
9.6
Typ
20
9
7
9.8
Vctrl
Vctrl
CHA7012
Vctrl
Vctrl
Biasing
Biasing
Biasing
Biasing
Circuit
Circuit
Circuit
Circuit
Max
10.4
+80
1 0
Vc
Vc
1 0.2
Vc
Vc
Unit
GHz
Vc
Vc
dB
Vc
Vc
W
W
° C
1 0.4
OUT
OUT
1 0.6

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CHA7012 Summary of contents

Page 1

... Description The CHA7012 chip is a monolithic two- stage GaAs high power amplifier designed for X band applications. www.DataSheet4U.com This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridge. A nitride layer protects the transistors and the passive components ...

Page 2

... For higher compression the level limit can be increased by decreasing the voltage Vc using the rate 0 dBc Equivalent Thermal resistance to Backside: 6° C/W Ref. : DSCHA70127235 - 23 Aug 07 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 X-band High Power Amplifier Parameter Min 17 ...

Page 3

... Output Power @ 3dBc versus frequency and temperature Ref. : DSCHA70127235 - 23 Aug 07 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 +20° C +80° C -40° C 8.7 8.9 9.1 9.3 9.5 9.7 Frequency (GHz) Linear gain versus frequency and temperature 8 ...

Page 4

... PAE @ 3dBc versus frequency and temperature 3 2.9 2.8 2.7 2.6 2.5 2.4 2.3 2.2 2.1 2 8.5 8.7 8 3dBc versus frequency and temperature Ref. : DSCHA70127235 - 23 Aug 07 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 X-band High Power Amplifier +20°C +80°C -40° C 9.1 9.3 9.5 9.7 9.9 Frequency (GHz) 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.5 10.7 10.9 11.1 Frequency (GHz) 4/10 10.1 10.3 10.5 10.7 10.9 11.1 +20° C +80° ...

Page 5

... Output Power @ 25° C versus compression and frequenc Ref. : DSCHA70127235 - 23 Aug 07 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Compression (dB Compression (dB) PAE @ 25° C versus compression and frequency ...

Page 6

... Collector quiescent current versus TI & Vctrl and temperature Ref. : DSCHA70127235 - 23 Aug 07 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 X-band High Power Amplifier Compression (dB TI/Vctrl (V) 6/10 9.2GHz 9.4GHz 9.6GHz 9.8GHz 10GHz 10.2GHz 10.4GHz ...

Page 7

... Collector current control versus control voltage and temperature 1.2 1 0.8 0.6 0.4 0 Ref. : DSCHA70127235 - 23 Aug 07 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 VCTRL (V) TTL input current versus TTL voltage and temperature TTL( V) TTL input current versus TTL voltage and temperature ...

Page 8

... Pin number 15 10, 14 11, 13, 17 Ref. : DSCHA70127235 - 23 Aug 07 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 X-band High Power Amplifier Pin name IN Vctrl Collector current control voltage TI TO ...

Page 9

... TTL circuits) * Performances obtained with the same accesses connected to the same supply Note : Supply feed should be capacitively by-passed. 25µm diameter gold wire prefered. Ref. : DSCHA70127235 - 23 Aug 07 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 ...

Page 10

... United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA70127235 - 23 Aug 07 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 ...

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