CHA2066 United Monolithic Semiconductors, CHA2066 Datasheet

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... Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography supplied in chip form. ...

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... Storage temperature range (1) Operation of this device above anyone of these paramaters may cause permanent damage. (2) Duration < 1s. (3) For a typical biasing circuit : Ref. : DSCHA20661257 -14-Sept-01 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 10-16GHz Low Noise Amplifier Test ...

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... MS11 PS11 GHz dB ° 1.00 -0.25 -16.1 2.00 -0.54 -31.8 3.00 -0.88 -48.8 4.00 -1.38 -68.9 5.00 -2.32 -95.1 6.00 -4.51 -131.2 7.00 -8.90 -177.3 8.00 -12.32 122.2 9.00 -10.70 61.8 10.00 -8.32 24.9 11.00 -7.00 -1.8 12.00 -6.48 -23.4 13.00 -6.63 -42.1 14.00 -7.33 -58.2 15.00 -8.51 -71.5 16.00 -9.93 -79.7 17.00 -11.00 -82.6 18.00 -11.11 -83.8 19.00 -10.35 -88.5 20.00 -9.53 -100.1 21.00 -8.97 -117.1 22.00 -9.04 -137.0 23.00 -9.70 -161.0 24.00 -10.97 174.2 25.00 -12.61 144.5 26.00 -14.42 110.6 Ref. : DSCHA20661257 -14-Sept-01 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 MS12 PS12 MS21 dB ° dB -82.22 90.1 -46.86 -83.38 37.9 -46.99 -84.02 17.8 -30.57 -72.90 21.7 -12.70 -62.06 8.4 -1.44 -52.22 -25.9 7.98 -45.23 -71.4 13.83 -41.37 -112.2 16.32 -39.16 -144.4 17.19 -37.57 -170.5 17.48 -36.41 168.3 17.54 -35.43 149.3 17.55 -34.71 131.5 17.53 -34.27 114.2 17.44 -34.16 98.4 17.23 -34.42 83.4 16.85 -35.18 70.8 16.29 -36.29 61.5 15.59 -37.52 58.2 14.75 -38.26 59.5 13.82 -37.98 64.4 12.71 -36.56 64.7 11.36 -35.28 56.8 9.72 -34.49 47.1 7.77 -34.15 36.2 5 ...

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... Typical Gain and Noise Figure measurements on wafer. Ref. : DSCHA20661257 -14-Sept-01 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 10-16GHz Low Noise Amplifier Gain dBS22 Frequency ( GHz ) GAIN NF 13 ...

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... Pin ( dBm ) at 12GHz Typical Output Power measurements in test-jig. Ref. : DSCHA20661257 -14-Sept-01 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 dBS11 dBS21 Frequency ( GHz ) ...

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... A Pad size 100x100µm, chip thickness 100µm Dimensions : 1520 x 1080µm 115 1010 410 225 35 Ref. : DSCHA20661257 -14-Sept-01 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 10-16GHz Low Noise Amplifier 1520µ ...

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... Low Noise and low consumption : ( Equivalent to A,B,C,D and Vd=4V ; G1=+1.4V ; G2=+1.4V). Low Noise and high output power : ( Equivalent to A,B,C,D and Vd=5V ; G1=+1.4V ; G2=+4.0V). A file is available on request to help the biasing option tuning. Ref. : DSCHA20661257 -14-Sept-01 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 100pF IN ...

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... United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA20661257 -14-Sept-01 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 ...