DS42515 AMD, DS42515 Datasheet - Page 47

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DS42515

Manufacturer Part Number
DS42515
Description
MCP Flash Memory and SRAM
Manufacturer
AMD
Datasheet
AC CHARACTERISTICS
Alternate CE#f Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Flash Erase And Programming Performance” section for more information.
JEDEC
t
t
t
WHWH1
WHWH1
WHWH2
t
t
t
t
t
t
t
t
t
t
EHWH
AVWL
DVEH
EHDX
GHEL
WLEL
ELAX
ELEH
EHEL
AVAV
Parameter
t
t
t
WHWH1
WHWH1
WHWH2
t
t
t
t
Std
GHEL
t
t
t
t
t
t
t
t
ASO
AHT
CPH
WC
WS
WH
DH
AS
AH
DS
CP
Write Cycle Time (Note 1)
Address Setup Time (WE# to Address)
Address Setup Time to CE#f Low During Toggle
Bit Polling
Address Hold Time
Address Hold time from CE#f or OE# High During
Toggle Bit Polling
Data Setup Time
Data Hold Time
Read Recovery Time Before Write
(OE# High to WE# Low)
WE# Setup Time
WE# Hold Time
CE#f Pulse Width
CE#f Pulse Width High
Programming Operation
(Note 2)
Accelerated Programming Operation,
Word or Byte (Note 2)
Sector Erase Operation (Note 2)
Description
DS42515
Word
Byte
Min
85
15
45
35
35
35
0
0
0
0
0
0
85 ns Speed
Typ
0.7
5
7
4
Max
Unit
sec
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
47

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