CHA1077A United Monolithic Semiconductors, CHA1077A Datasheet - Page 4

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CHA1077A

Manufacturer Part Number
CHA1077A
Description
W-band Low Noise Amplifier
Manufacturer
United Monolithic Semiconductors
Datasheet

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CHA1077a
Typical Assembly and Bias Configuration to get minimum
www.DataSheet4U.com
noise figure :
This drawing shows an example of assembly and bias configuration. All the
transistors are internally self-biased. An external capacitor is recommended for
the positive and negative supply voltages.
For the RF pads the equivalent wire bonding inductance (diameter=25µm) have
to be according to the following recommendation.
(1) This value is the total length including the necessary loop from pad to
For a micro-strip configuration a hole in the substrate is necessary for chip
assembly.
µ- strip line
Ref. DSCHA1077a6013 - 13 Jan 06
pad.
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
L_in
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
OUT
Port
IN
8
9
7
>= 120pF
Equivalent inductance
0
L_out = 0.25
L_in = 0.25
+V
DC lines
(nH)
4/8
2
-V
Wire length (mm)
Specifications subject to change without notice
3
0.34
0.34
(1)
10991
6
5
4
W-band LNA
L_out
µ- strip line

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