CHA2066 United Monolithic Semiconductors, CHA2066 Datasheet - Page 2

• Manufacturer Part Number: CHA2066
• Description: 10-16GHz Low Noise Amplifier
• Manufacturer: United Monolithic Semiconductors

CHA2066
Electrical Characteristics
Tamb = +25°C, Vd = +4V
VSWRout Ouput VSWR ( 11 to 16 GHz ) (1)
Absolute Maximum Ratings
Tamb = +25°C
VSWRin
Symbol
Symbol
(1) These values are representative of on-wafer measurements that are made without bonding wires
(2) This current is the typical value from the low noise low consumption biasing ( B & D grounded ).
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Duration < 1s.
(3) For a typical biasing circuit :
P1dB
at the RF ports. When the chip is attached with typical 0.3nH input and output bonding wires, the
indicated parameter values should be improved.
Tstg
Ref. : DSCHA20661257 -14-Sept-01
Fop
Top
IP3
Pin
NF
Vd
Id
G
G
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Operating frequency range
Gain (1)
Gain flatness (1)
Noise figure (1)
Input VSWR (1)
3rd order intercept point
Output power at 1dB gain
compression
Drain bias current (2)
Drain bias voltage (3)
Maximum peak input power overdrive (2)
Operating temperature range
Storage temperature range
Tel.: [phone] - Fax : [phone]
Parameter
Parameter (1)
B & D grounded
(1)
2/8
. See chip biasing option page 7/8.
10-16GHz Low Noise Amplifier
Condi
tions
Test
Specifications subject to change without notice
Min
10
14
-55 to +125
-40 to +85
Values
+15
4.5
Typ
2.0
16
20
10
45
0.5
3.0:1
3.0:1
Max
2.5
16
1.0
dBm
Unit
°C
°C
dBm
dBm
Unit
V
Ghz
mA
dB
dB
dB