CHA6517 United Monolithic Semiconductors, CHA6517 Datasheet - Page 9

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CHA6517

Manufacturer Part Number
CHA6517
Description
6 - 18 GHz High Power Amplifier
Manufacturer
United Monolithic Semiconductors
Datasheet

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X-band High Power Amplifier
Ref. : DSCHA6517-8205 - 25 Jun 08
For thermal and electrical considerations, the chip should be brazed on a metal base plate.
The RF and DC connections should be done according to the following table:
VD (6, 8, 10, 11, 12, 13,
VG (2, 3, 4, 19, 20, 21)
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
OUT (7, 16)
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
IN (1, 22)
15, 17 )
Port
Assembly recommendations (one channel)
Inductance (Lbonding) = 0.3nH
Inductance (Lbonding) = 0.3nH
Inductance
Inductance
9/10
Connection
1nH
1nH
Specifications subject to change without notice
External capacitor
C2~ 120pF
C1 ~ 22pF
C4~100nF
C3~ 1nF
CHA6517
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