S29GL512N SPANSION, S29GL512N Datasheet - Page 87

• Manufacturer Part Number: S29GL512N
• Description: Page Mode Flash Memory
• Manufacturer: SPANSION

AC Characteristics
Alternate CE# Controlled Erase and Program Operations-
S29GL128N, S29GL256N, S29GL512N
Notes:
1. Not 100% tested.
2. See
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 90 ns, 100ns, and 110 ns speed options are tested with V
6. 90 ns speed option only applicable to S29GL128N and S29GL256N.
S29GL-N_00_B3 October 13, 2006
t
t
JEDEC
t
WHWH1
WHWH2
t
t
t
t
t
t
t
t
t
EHWH
AVWL
DVEH
EHDX
WLEL
AVAV
ELAX
GHEL
ELEH
EHEL
= 3 V. AC specifications for 110 ns speed options are tested with V
Parameter
AC Characteristics‚ on page 77
t
t
WHWH1
WHWH2
t
t
t
T
t
t
Std.
t
CEPH
OEPH
GHEL
t
t
t
t
t
t
t
ASO
AHT
CPH
WH
WC
DH
WS
AS
AH
DS
CP
Write Cycle Time
Address Setup Time
Address Setup Time to OE# low during toggle bit
polling
Address Hold Time
Address Hold Time From CE# or OE# high during
toggle bit polling
Data Setup Time
Data Hold Time
CE# High during toggle bit polling
OE# High during toggle bit polling
Read Recovery Time Before Write
(OE# High to WE# Low)
WE# Setup Time
WE# Hold Time
CE# Pulse Width
CE# Pulse Width High
Write Buffer Program Operation (Notes 2, 3)
Effective Write Buffer Program
Operation (Notes 2, 4)
Effective Accelerated Write Buffer
Program Operation (Notes 2, 4)
Program Operation
Accelerated Programming
Operation
Sector Erase Operation
(Note 2)
(Note 1)
(Note 2)
Description
D a t a
for more information.
(Note 2)
S29GL-N MirrorBit™ Flash Family
S h e e t
Per Word
Per Word
Word
Word
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Typ
Typ
IO
= 1.8 V and V
(Note 6)
90
90
Speed Options
CC
100
100
= 3.0 V.
13.5
240
0.5
15
45
45
20
20
35
30
15
60
54
0
0
0
0
0
0
110
110
110
110
IO
= V
Unit
sec
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
µs
85
CC