S29GL512N SPANSION, S29GL512N Datasheet - Page 96

• Manufacturer Part Number: S29GL512N
• Description: Page Mode Flash Memory
• Manufacturer: SPANSION

D a t a
S h e e t
Revision A4 (May 13, 2004)
Global
Removed references to RTSOP.
Distinctive Characteristics
Removed 16-word/32-byte page read buffer from Performance Characteristics.
Changed Low power consumption to 25 mA typical active read current and removed 10 mA
typical intrapage active read current.
Ordering Information
Changed formatting of pages.
Changed model numbers from 00,01,02,03 to 01, 02, V1, V2.
Table 1, “Device Bus Operations”
Combined WP# and ACC columns.
Table 8, “CFI Query Identification String”, Table 9, “System Interface String”,
Table 10, “Device Geometry Definition”, and Table 11, “Primary Vendor-Specific
Extended Query
Added Address (x8) column.
Word Program Command Sequence
Added text to fourth paragraph.
Figure 1, “Write Buffer Programming Operation,”
Added note references and removed DQ15 and DQ13.
Figure 3, “Program Suspend/Program Resume,”
Changed field to read XXXh/B0h and XXXh/30h.
Password Protection Command Set Definitions
Replaced all text.
Command Definitions
Changed the first cycle address of CFI Query to 55.
Table 14, “ Memory Array Commands (x8)”
Changed the third cycle data Device ID to 90.
Removed Unlock Bypass Reset.
Removed Note 12 and 13.
Figure 5, “Data# Polling Algorithm,”
Removed DQ15 and DQ13.
Absolute Maximum Ratings
Removed VCC from All other pins with respect to Ground.
CMOS Compatible
Changed the Max of I
to 70 mA.
CC4
Added V
to the Test conditions of I
, I
, and I
IL
CC5
CC6
CC7
Change the Min of V
to - 0.1 V.
IL
Updated note 5.
Read-Only Operations–S29GL128N Only
Added t
parameter to table.
CEH
94
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006