S29GL128P SPANSION, S29GL128P Datasheet - Page 62

• Manufacturer Part Number: S29GL128P
• Description: Page Mode Flash Memory
• Manufacturer: SPANSION

Notes
1. Typical program and erase times assume the following conditions: 25°C, 3.6 V V
2. Under worst case conditions of -40°C, V
3. Effective write buffer specification is based upon a 32-word write buffer operation.
4. The typical chip programming time is considerably less than the maximum chip programming time listed, since most words program faster than the maximum
5. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
6. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Tables 12.1–12.4.
Notes
1. Sampled, not 100% tested.
2. Test conditions T
60
Sector Erase Time
Chip Erase Time
Total Write Buffer Time
Total Accelerated Write Buffer Programming Time
(Note 3)
Chip Program Time
11.7.5
program times listed.
11.7.6
Parameter Symbol
C
C
C
OUT
IN2
IN
A
Erase And Programming Performance
TSOP Pin and BGA Package Capacitance
= 25°C, f = 1.0 MHz.
(Note 4)
Parameter
(Note 3)
Control Pin Capacitance
Parameter Description
Output Capacitance
Input Capacitance
CC
S29GL01GP
S29GL01GP
S29GL128P
S29GL256P
S29GL512P
S29GL128P
S29GL256P
S29GL512P
= 3.0 V, 100,000 cycles.
Table 11.8 Erase And Programming Performance
D a t a
S29GL-P MirrorBit
S h e e t
(Note 1)
Table 1:
Typ
128
256
512
480
432
123
246
492
984
0.5
64
( A d v a n c e
V
TM
CC
V
V
OUT
IN
IN
Flash Family
, 10,000 cycles, checkerboard pattern.
= 0
= 0
= 0
Test Setup
(Note 2)
1024
2048
Max
256
512
3.5
I n f o r m a t i o n )
TSOP
TSOP
TSOP
BGA
BGA
BGA
Unit
sec
sec
sec
µs
µs
Excludes 00h programming
prior to erasure
Excludes system level
overhead
Typ
S29GL-P_00_A3 November 21, 2006
4.2
8.5
5.4
7.5
3.9
6
Comments
(Note 6)
Max
7.5
5.0
6.5
4.7
12
9
(Note 5)
Unit
pF
pF
pF
pF
pF
pF