S29GL256N10TFI023 ETC, S29GL256N10TFI023 Datasheet
S29GL256N10TFI023
Manufacturer Part Number
S29GL256N10TFI023
Description
MirrorBit Flash Family
Manufacturer
ETC
Datasheet
1.S29GL256N10TFI023.pdf
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S29GLxxxN MirrorBit
S29GL512N, S29GL256N, S29GL128N
512 Megabit, 256 Megabit, and 128 Megabit,
3.0 Volt-only Page Mode Flash Memory featuring
110 nm MirrorBit process technology
Datasheet
Distinctive Characteristics
Architectural Advantages
Performance Characteristics
This document contains information on a product under development at FASL LLC. The information is intended to help you evaluate this product. FASL LLC reserves the
right to change or discontinue work on this proposed product without notice.
Single power supply operation
— 3 volt read, erase, and program operations
Enhanced VersatileI/O™ control
— All input levels (address, control, and DQ input levels)
Manufactured on 110 nm MirrorBit process
technology
SecSi™ (Secured Silicon) Sector region
— 128-word/256-byte sector for permanent, secure
— May be programmed and locked at the factory or by
Flexible sector architecture
— S29GL512N: Five hundred twelve 64 Kword (128
— S29GL256N: Two hundred fifty-six 64 Kword (128
— S29GL128N: One hundred twenty-eight 64 Kword
Compatibility with JEDEC standards
— Provides pinout and software compatibility for single-
100,000 erase cycles per sector typical
20-year data retention typical
High performance
— 80 ns access time (S29GL128N, S29GL256N),
— 8-word/16-byte page read buffer
— 25 ns page read times
— 16-word/32-byte write buffer reduces overall
Low power consumption (typical values at 3.0 V, 5
MHz)
— 25 mA typical active read current;
— 50 mA typical erase/program current
— 1 µA typical standby mode current
Package options
— 56-pin TSOP
— 64-ball Fortified BGA
and outputs are determined by voltage on V
V
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
the customer
Kbyte) sectors
Kbyte) sectors
(128 Kbyte) sectors
power supply flash, and superior inadvertent write
protection
90 ns access time (S29GL512N)
programming time for multiple-word updates
IO
range is 1.65 to V
Publication Number 27631
CC
TM
Flash Family
IO
Revision A
input.
Amendment 4
Software & Hardware Features
Software features
— Program Suspend & Resume: read other sectors
— Erase Suspend & Resume: read/program other
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
— CFI (Common Flash Interface) compliant: allows host
Hardware features
— Advanced Sector Protection
— WP#/ACC input accelerates programming time
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
before programming operation is completed
sectors before an erase operation is completed
multiple-word or byte programming time
system to identify and accommodate multiple flash
devices
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings
erase cycle completion
Issue Date May 13, 2004
INFORMATION
ADVANCE
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