S29GL256N10TFI023 ETC, S29GL256N10TFI023 Datasheet - Page 104

• Manufacturer Part Number: S29GL256N10TFI023
• Description: MirrorBit Flash Family
• Manufacturer: ETC

Erase And Programming Performance
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V V
2. Under worst case conditions of 90°C, V
3. Effective write buffer specification is based upon a 16-word write buffer operation.
4. The typical chip programming time is considerably less than the maximum chip programming time listed, since most
5. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
6. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
TSOP Pin and BGA Package Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
104
Parameter
Sector Erase Time
Chip Erase Time
Total Write Buffer Time
(Note 3)
Total Accelerated Effective
Write Buffer Programming
Time (Note 3)
Chip Program Time
Parameter Symbol
pattern.
words program faster than the maximum program times listed.
command. See Table 17 for further information on command definitions.
C
C
C
OUT
IN2
IN
A
= 25°C, f = 1.0 MHz.
Parameter Description
Control Pin Capacitance
Output Capacitance
Input Capacitance
S29GL128N
S29GL256N
S29GL512N
S29GL128N
S29GL256N
S29GL512N
S29GLxxxN MirrorBitTM Flash Family
CC
= 3.0 V, 1,000,000 cycles.
A d v a n c e
(Note 1)
Typ
128
256
512
240
200
123
246
492
1
V
V
V
OUT
IN
IN
= 0
= 0
I n f o r m a t i o n
= 0
Test Setup
(Note 2)
1024
Max
256
512
3.5
TSOP
TSOP
TSOP
Unit
sec
sec
sec
CC
µs
µs
, 10,000 cycles, checkerboard
Typ
8.5
7.5
Excludes 00h programming
6
prior to erasure (Note 5)
Excludes system level
overhead (Note 6)
Max
Comments
7.5
12
9
27631A4 May 13, 2004
Unit
pF
pF
pF