[Rated 200A/1200V, Dual-pack type]
FEATURES
CIRCUIT DIAGRAM
ABSOLUTE MAXIMUM RATINGS(T
Notes; *1: RMS current of Diode £ 60 Arms
CHARACTERISTICS (T
Notes; *4:R
Remark; The specification given herein, is subject to change without prior notice to improve product characteristics.
· Low saturation voltage and high speed.
· Low turn-OFF switching loss.
· Low noise due to build-in free-wheeling diode.
· High reliability structure.
· Isolated heat sink (terminals to base).
Hitachi IGBT Module / Silicon N-Channel IGBT
MBM200GR12
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Forward Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Screw Torque
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
Switching Times
Peak Forward Voltage Drop
Reverse Recovery Time
Thermal Impedance
C2E1
(Ultra Soft and Fast recovery Diode (USFD))
*2, *3 : Recommended value 1.67 N·m (17 kgf·cm)
the suitable R
G
value is the test condition’s value for decision of the switching times, not recommended value, please determine
Item
Item
E2
G
IGBT
FWD
Rise Time
Turn-ON Time
Fall Time
Turn-Off Time
DC
1ms
DC
1ms
Terminals
Mounting
value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted.
C
=25°C)
C1
Symbol
V
V
R
R
I
I
V
CE(sat)
GE(TO)
C
GES
CES
t
t
th(j-c)
th(j-c)
t
t
t
on
off
FM
ies
rr
r
f
C
Symbol
=25°C)
G1
G2
E2
V
V
E1
T
V
I
I
P
-
CES
GES
I
I
T
CP
FM
stg
C
F
iso
°C/W
C
j
Unit
mA
nA
pF
ms
ms
V
V
V
(kgf·cm)
Min.
OUTLINE DRAWING
-
-
-
-
-
-
-
-
-
-
-
-
Unit
N·m
°C
°C
W
V
V
A
A
V
RMS
2- 5.6
19000
0.35
Typ.
2.2
0.2
0.2
0.5
2.5
-
-
-
-
-
3-M5
±500
Max.
0.35
0.35
0.20
0.11
1.0
2.8
0.5
0.8
1.0
3.5
10
-
C2E1
19
23
V
V
I
V
V
V
R
R
V
I
I
Junction to case
2500(AC 1 minute)
C
F
F
CE
GE
CE
CE
CC
GE
=200A, V
=200A, V
=200A, V
L
G
=3.0W
=6.2W
=1200V, V
=5V, I
=10V, V
92
80
20
E2
=±20V, V
=600V
=±15V
-40 ~ +150
-40 ~ +125
1.96(20)
1.96(20)
Value
1200
1130
23
200
±20
200
400
400
Spec. No. IGBT-SP-99024(R1)
C
18.5
Test Conditions
=200mA
40
GE
GE
GE
*4
GE
C1
0.8
CE
=0V
=-10V, di/dt=300A/ms
=15V
=0V, f=1MHz
*1
GE
=0V
=0V
*2
*3
4-Fast-on
Terminal #110
Weight : 230g
Unit in mm