MBM200GR12 Hitachi, MBM200GR12 Datasheet - Page 2

• Manufacturer Part Number: MBM200GR12
• Description: IGBT POWER MODULE
• Manufacturer: Hitachi

Collector to Emitter voltage vs. Gate to Emitter voltage
400
300
200
100
10
20
15
10
0
8
6
4
2
0
5
0
Collector current vs. Collector to Emitter voltage
0
0
0
Tc
Vcc
Ic
Tc
Tc
=
VGE
=
=
25
=
25
200A
=
25
600V
°
°
C
Collector to Emitter Voltage, V
°
=
C
C
15V14V13V
Gate to Emitter Voltage, V
2
Gate charge characteristics
5
500
Gate Charge, Q
4
Pc
10
=
1130W
6
1000
G
(nC)
GE
15
CE
(V)
8
Ic
Ic
TYPICAL
TYPICAL
TYPICAL
(V)
=
=
400A
200A
1500
10
20
12V
11V
10V
9V
Collector to Emitter voltage vs. Gate to Emitter voltage
400
300
200
100
400
300
200
100
10
8
6
4
2
0
0
0
Collector current vs. Collector to Emitter voltage
0
0
0
V
Tc
Tc
Tc
Tc
GE
=
=
=
=
125
=
25
125
Forward voltage of free-wheeling diode
125
0
VGE
°
C
Collector to Emitter Voltage, V
°
°
°
C
C
Gate to Emitter Voltage, V
C
1
2
=
5
15V14V13V
Forward Voltage, V
2
4
10
3
6
F
GE
15
(V)
(V)
CE
4
Ic
TYPICAL
Ic
8
TYPICAL
TYPICAL
=
(V)
=
PDE-M200GR12-0
400A
200A
20
10
5
12V
11V
10V
9V