MBM29DL324TD Fujitsu Media Devices, MBM29DL324TD Datasheet - Page 71

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MBM29DL324TD

Manufacturer Part Number
MBM29DL324TD
Description
(MBM29DL32xBD) 32M (4M X 8/2M X 16) BIT Dual Operation
Manufacturer
Fujitsu Media Devices
Datasheet

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• Low V
To avoid initiation of a write cycle during V
than V
Under this condition the device will reset to the read mode. Subsequent writes will be ignored until the V
is greater than V
unintentional writes when V
If Embedded Erase Algorithm is interrupted, there is possibility that the erasing sector(s) cannot be used.
• Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE, CE, or WE will not initiate a write cycle.
• Logical Inhibit
Writing is inhibited by holding any one of OE = V
must be a logical zero while OE is a logical one.
• Power-Up Write Inhibit
Power-up of the devices with WE = CE = V
The internal state machine is automatically reset to the read mode on power-up.
LKO
CC
(min). If V
Write Inhibit
LKO
CC
. It is the users responsibility to ensure that the control pins are logically correct to prevent
< V
LKO
, the command register is disabled and all internal program/erase circuits are disabled.
CC
is above V
LKO
CC
IL
(min).
and OE = V
power-up and power-down, a write cycle is locked out for V
IL
, CE = V
MBM29DL32XTD/BD
IH
will not accept commands on the rising edge of WE.
IH
, or WE = V
IH
. To initiate a write cycle CE and WE
-80/90/12
CC
CC
level
less
71

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