TIM5964-80SL Toshiba Semiconductor, TIM5964-80SL Datasheet
TIM5964-80SL
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TIM5964-80SL Summary of contents
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... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM5964-80SL HIGH GAIN G1dB=7.0dB at 5.9GHz to 6.4GHz BROAD BAND INTERNALLY MATCHED FET ...
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... Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage Temperature PACKAGE OUTLINE (7-AA02C) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM5964-80SL SYMBOL UNIT ...
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... RF PERFORMANCE Output Power (Pout) vs. Frequency VDS=10V ≅18. Pin=42.0dBm 5.8 Output Power(Pout) vs. Input Power(Pin) 52 freq.=6.4GHz 51 V =10V DS I set≅10. TIM5964-80SL 5.9 6.0 6.1 6.2 6.3 Frequency(GHz) Pout ηadd 40 42 Pin(dBm) 3 www.DataSheet4U.com 6.4 6 ...
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... Power Dissipation(PT) vs. Case Temperature(Tc) 250 200 100 IM3 vs. Power Characteristics 0 V =10V DS I set≅10.0A DS freq.=6.4GHz -10 Δf=5MHz -20 -30 -40 - Pout(dBm) @Single carrier level TIM5964-80SL 80 120 160 Tc( ° www.DataSheet4U.com 200 48 ...