spd50n03s2l-06g Infineon Technologies Corporation, spd50n03s2l-06g Datasheet - Page 2

• Manufacturer Part Number: spd50n03s2l-06g
• Description: Optimos? Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Electrical Characteristics, at T
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
Drain-source on-state resistance
V
1 Current limited by bondwire ; with an R
information see app.-note ANPS071E available at www.infineon.com/optimos
2 Defined by design. Not subject to production test.
3 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
GS
= 85 µA
=0V, I
=30V, V
=30V, V
=20V, V
=4.5V, I
=10V, I
2
cooling area
D
D
=1mA
GS
GS
DS
D
=50A
=50A
=0V, T
=0V, T
=0V
j
j
3)
=25°C
=125°C
GS
= V
DS
j
thJC
= 25 °C, unless otherwise specified
= 1.1K/W the chip is able to carry I
Page 2
Symbol
V
V
I
I
R
R
Symbol
R
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
DS(on)
thJC
thJA
thJA
min.
min.
1.2
30
-
-
-
-
-
-
-
-
-
D
= 113A at 25°C, for detailed
Values
Values
0.01
SPD50N03S2L-06
typ.
typ.
1.6
6.8
4.7
0.7
10
1
-
-
-
-
max.
max.
100
100
100
9.2
6.4
1.1
75
50
02-09-2008
2
1
-
Unit
V
µA
nA
mΩ
Unit
K/W
G