spd50n03s2l-06g Infineon Technologies Corporation, spd50n03s2l-06g Datasheet - Page 4

• Manufacturer Part Number: spd50n03s2l-06g
• Description: Optimos? Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

1 Power dissipation
P
parameter: V
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
= f (T
10
10
10
10
150
120
110
100
W
A
90
80
70
60
50
40
30
20
10
0
3
2
1
0
10
0
SPD50N03S2L-06
SPD50N03S2L-06
DS
-1
C
20
)
)
GS
40
≥ 4 V
60
10
0
C
80
= 25 °C
100 120 140 160
10
1
t
p = 7.6µs
V
10 µs
100 µs
1 ms
T
V
°C
C
DS
190
10
Page 4
2
2 Drain current
I
parameter: V
4 Max. transient thermal impedance
Z
parameter : D = t
D
thJC
= f (T
K/W
10
10
10
10
10
10
A
55
45
40
35
30
25
20
15
10
5
0
= f (t
-1
-2
-3
-4
0
1
0
10
C
SPD50N03S2L-06
SPD50N03S2L-06
)
-7
20
p
)
10
single pulse
GS
40
-6
≥ 10 V
10
p
60
/T
-5
80
10
SPD50N03S2L-06
-4
100 120 140 160
10
-3
10
02-09-2008
-2
D = 0.50
0.20
0.10
0.05
0.02
0.01
T
t
s
°C
p
C
190
10
0
G