spd50n03s2l-06g Infineon Technologies Corporation, spd50n03s2l-06g Datasheet - Page 6

• Manufacturer Part Number: spd50n03s2l-06g
• Description: Optimos? Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
Ω
pF
10
10
10
15
12
11
10
9
8
7
6
5
4
3
2
1
0
-60
4
3
2
0
SPD50N03S2L-06
= f (T
DS
)
-20
D
j
5
GS
)
= 50 A, V
=0V, f=1 MHz
20
10
98%
60
typ
GS
15
= 10 V
100
20
C
C
C
oss
140 °C
rss
iss
V
T
V
j
DS
200
30
Page 6
10 Typ. gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
10
10
10
10
2.5
1.5
0.5
V
A
1
0
-60
3
2
1
0
0
= f (T j )
SD
SPD50N03S2L-06
)
0.4
-20
GS
0.8
p
= V
83 µA
= 80 µs
20
DS
1.2
T
T
T
T
SPD50N03S2L-06
j
j
j
j
= 25 °C typ
= 175 °C typ
= 25 °C (98%)
= 175 °C (98%)
0.415 mA
1.6
60
2
100
02-09-2008
2.4
°C
V
V
T
j
SD
160
3
G