psmn5r0-100bs NXP Semiconductors, psmn5r0-100bs Datasheet - Page 6

• Manufacturer Part Number: psmn5r0-100bs
• Description: Psmn5r0-100bs N-channel 100 V 5 M?? Standard Level Mosfet In D2pak
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
PSMN5R0-100BS
Objective data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
R
g
(m Ω )
fs
DSon
250
200
150
100
50
20
15
10
0
5
0
drain current; typical values
of gate-source voltage; typical values
Forward transconductance as a function of
Drain-source on-state resistance as a function
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
30
5
…continued
60
10
90
15
Conditions
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
V
DS
003aaf723
003aaf725
I
= 25 A; V
= 25 A; dI
GS
D
(A)
Figure 17
= 50 V
(V)
Rev. 01 — 24 December 2010
120
20
GS
S
/dt = -100 A/µs; V
= 0 V; T
N-channel 100 V 5 mΩ standard level MOSFET in D2PAK
Fig 6.
Fig 8.
j
= 25 °C;
(A)
I
(A)
D
I
D
100
240
200
160
120
80
60
40
20
80
40
0
0
function of gate-source voltage; typical values
function of drain-source voltage; typical values
Transfer characteristics: drain current as a
Output characteristics: drain current as a
GS
0
0
= 0 V;
0.5
20.0
PSMN5R0-100BS
T
j
2
= 175 ° C
10.0
8.0
6.0
5.5
Min
-
-
-
1
4
Typ
0.8
75
235
1.5
V
© NXP B.V. 2010. All rights reserved.
T
V
GS
j
GS
003aaf724
003aaf726
= 25 ° C
V
(V)
DS
(V) =5
Max
1.2
-
-
4.5
(V)
6
2
Unit
V
ns
nC
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