psmn006 NXP Semiconductors, psmn006 Datasheet - Page 6

• Manufacturer Part Number: psmn006
• Description: Psmn006-20k Trenchmos Tm Ultra Low Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 09631
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
(m )
T
T
(A)
j
j
I D
= 25 C
= 25 C
30
20
10
10
0
8
6
4
2
0
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
T j = 25 C
0.05
10
0.1
4.5 V
2.5 V
20
0.15
2 V
V GS = 1.5 V
V GS = 1 V
I D (A)
V DS (V)
03ai64
03ai65
2.5 V
4.5 V
1.5 V
1.3 V
1.1 V
2 V
0.2
30
Rev. 01 — 30 May 2002
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
T
a
(A)
a
j
I D
1.5
0.5
= 25 C and 150 C; V
=
30
20
10
2
1
0
0
function of gate-source voltage; typical values.
factor as a function of junction temperature.
-60
---------------------------- -
R
0
DSon 25 C
V DS > I D x R DSon
R
DSon
0.4
0
T j = 150 C
TrenchMOS™ ultra low level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
DS
PSMN006-20K
0.8
60
> I
D
x R
25 C
DSon
120
1.2
V GS (V)
T j ( C)
03ai66
03af18
180
1.6
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