psmn006 NXP Semiconductors, psmn006 Datasheet - Page 7

• Manufacturer Part Number: psmn006
• Description: Psmn006-20k Trenchmos Tm Ultra Low Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 09631
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
V GS(th)
(V)
I
V
D
0.8
0.6
0.4
0.2
GS
= 1 mA; V
1
0
junction temperature.
= 0 V; f = 1 MHz
-80
DS
= V
GS
0
typ
min
80
(pF)
C
10 4
10 3
10 2
10 -1
T j ( C)
03ai71
160
Rev. 01 — 30 May 2002
1
Fig 10. Sub-threshold drain current as a function of
10
(A)
I D
T
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
j
= 25 C; V
gate-source voltage.
V DS (V)
C iss
C oss
C rss
0
03ai68
DS
0.2
10 2
= 5 V
TrenchMOS™ ultra low level FET
0.4
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
min
PSMN006-20K
0.6
typ
0.8
V GS (V)
03ai70
1
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