psmn004-60p NXP Semiconductors, psmn004-60p Datasheet - Page 6

• Manufacturer Part Number: psmn004-60p
• Description: N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 09156
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
0.015
0.005
( )
0.01
T
T
300
200
100
(A)
I D
j
j
0
= 25 C
0
= 25 C
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
T j = 25 ºC
V GS = 20 V
20V
5 V
10 V
0.4
8 V
7.5 V
100
5.5 V
10 V
0.8
8 V
1.2
200
7 V
6 V
V GS = 4.5 V
7 V
T j = 25 C
1.6
6.5 V
I D (A)
V DS (V)
6.5 V
5.5 V
03ah82
o3ah83
6 V
5 V
300
2
Rev. 01 — 26 April 2002
N-channel enhancement mode field-effect transistor
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
(A)
I D
a
T
a
100
j
80
60
40
20
2.4
1.8
= 25 C and 175 C; V
1.2
0.6
=
0
function of gate-source voltage; typical values.
factor as a function of junction temperature.
0
0
-60
---------------------------- -
R
DSon 25 C
V DS > I D x R DSon
R
DSon
1
PSMN004-60P/60B
0
2
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
DS
T j = 175 ºC
3
> I
60
D
x R
4
DSon
120
T j ( C)
25 ºC
5
V GS (V)
03ah84
180
6
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