psmn005-25d-hg NXP Semiconductors, psmn005-25d-hg Datasheet - Page 7

• Manufacturer Part Number: psmn005-25d-hg
• Description: Psmn005-25d N-channel Logic Level Trenchmos Tm Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
October 1999
N-channel logic level TrenchMOS
Fig.13. Typical turn-on gate-charge characteristics.
15
14
13
12
11
10
50
45
40
35
30
25
20
15
10
9
8
7
6
5
4
3
2
1
0
5
0
I
F
0
0
Gate-source voltage, VGS (V)
Source-Drain Diode Current, IF (A)
= f(V
ID = 75 A
VDD = 15 V
Tj = 25 C
VGS = 0 V
Fig.14. Typical reverse diode current.
0.1
10
SDS
0.2
20
); conditions: V
0.3
30
Source-Drain Voltage, VSDS (V)
0.4
Gate charge, QG (nC)
40
V
175 C
GS
0.5
50
= f(Q
0.6
GS
60
G
0.7
= 0 V; parameter T
)
70
0.8
Tj = 25 C
80
0.9
90
1
100
1.1
110
1.2
j
(TM)
7
transistor
avalanche current (I
100
10
1
0.001
Fig.15. Maximum permissible non-repetitive
Maximum Avalanche Current, I
unclamped inductive load
0.01
Tj prior to avalanche = 150 C
Avalanche time, t
AS
) versus avalanche time (t
0.1
AS
(A)
PSMN005-25D
AV
(ms)
Product specification
1
25 C
Rev 1.100
10
AV
);