mtd8n06e Freescale Semiconductor, Inc, mtd8n06e Datasheet - Page 2

• Manufacturer Part Number: mtd8n06e
• Description: Tm Data Sheet Tmos E-fet.tm Power Field Effect Transistor Dpak For Surface Mount
• Manufacturer: Freescale Semiconductor, Inc

(1) Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
MTD8N06E
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (2)
SOURCE–DRAIN DIODE CHARACTERISTICS
INTERNAL PACKAGE INDUCTANCE
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage Current (V GS = ± 20 Vdc, V DS = 0)
Gate Threshold Voltage
Static Drain–Source On–Resistance (V GS = 10 Vdc, I D = 4.0 Adc)
Drain–Source On–Voltage (V GS = 10 Vdc)
Forward Transconductance (V DS = 10 Vdc, I D = 4.0 Adc)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
Forward On–Voltage (1)
Reverse Recovery Time
Reverse Recovery Stored Charge
Internal Drain Inductance
Internal Source Inductance
2
(V GS = 0 Vdc, I D = 250 Adc)
Temperature Coefficient (Positive)
(V DS = 60 Vdc, V GS = 0 Vdc)
(V DS = 60 Vdc, V GS = 0 Vdc, T J = 125°C)
(V DS = V GS , I D = 250 Adc)
Temperature Coefficient (Negative)
(I D = 8.0 Adc)
(I D = 4.0 Adc, T J = 125°C)
(See Figure 8)
(See Figure 8)
(See Figure 14)
(See Figure 14)
(Measured from the drain lead 0.25″ from package to center of die)
(Measured from the source lead 0.25″ from package to source bond pad)
Characteristic
(I S = 8.0 Adc, V GS = 0 Vdc, T J = 125°C)
(T J = 25°C unless otherwise noted)
(V
(V DS = 25 Vdc, V GS = 0 Vdc,
(V
(V DD = 30 Vdc, I D = 8.0 Adc,
(V
(V DS = 48 Vdc, I D = 8.0 Adc,
( DS
(I S = 8.0 Adc, V GS = 0 Vdc)
(I
(I S = 8.0 Adc, V GS = 0 Vdc,
( S
dI S /dt = 100 A/ s)
8 0 Ad
V GS = 10 Vdc
V GS = 10 Vdc,
V GS = 10 Vdc)
25 Vdc V
30 Vd
48 Vd
f = 1.0 MHz)
f = 1.0 MHz)
R G = 9.1 )
G
, GS
, D
V
I
I
)
8 0 Ad
8 0 Ad
0 Vd
0 Vdc
,
,
Motorola TMOS Power MOSFET Transistor Device Data
V (BR)DSS
R DS(on)
V DS(on)
Symbol
V GS(th)
t d(on)
t d(off)
I DSS
I GSS
C oss
Q RR
C iss
C rss
V SD
g FS
Q T
Q 1
Q 2
Q 3
L D
L S
t rr
t a
t b
t r
t f
Min
2.0
3.0
60
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.087
0.142
13.9
0.85
58.7
14.7
Typ
424
180
3.0
5.0
0.7
4.8
8.0
2.6
6.6
6.1
1.0
4.5
7.5
63
45
31
21
25
44
—
—
—
—
—
Max
0.12
100
100
570
250
4.0
1.2
1.0
2.0
—
—
10
—
—
90
20
60
40
50
20
—
—
—
—
—
—
—
—
—
—
mV/°C
mV/°C
mhos
nAdc
Ohm
Unit
Vdc
Vdc
Vdc
Vdc
nC
nH
nH
Adc
pF
ns
ns
C