sir836dp Vishay, sir836dp Datasheet - Page 3

• Manufacturer Part Number: sir836dp
• Description: N-channel 40-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 65543
S10-0040-Rev. A, 11-Jan-10
0.025
0.022
0.019
0.016
0.013
0.010
50
40
30
20
10
10
On-Resistance vs. Drain Current and Gate Voltage
0
8
6
4
2
0
0.0
0.0
0
V
V
GS
GS
I
D
= 10 V
= 10 A
= 4.5 V
V
2.5
0.5
10
DS
V
DS
= 10 V
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
I
D
- Total Gate Charge (nC)
V
- Drain Current (A)
DS
Gate Charge
5.0
1.0
20
= 20 V
V
GS
V
GS
= 10 V thru 4 V
1.5
30
7.5
= 3 V
V
DS
= 30 V
10.0
2.0
40
12.5
2.5
50
800
640
480
320
160
2.0
1.7
1.4
1.1
0.8
0.5
10
8
6
4
2
0
0
- 50
0
0
I
C
D
On-Resistance vs. Junction Temperature
rss
= 10 A
- 25
T
C
= 125 °C
T
1
8
C
V
V
= 25 °C
GS
DS
Transfer Characteristics
0
T
J
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
25
Capacitance
16
2
C
C
oss
50
iss
V
T
GS
C
Vishay Siliconix
= - 55 °C
= 10 V
24
3
75
SiR836DP
100
V
www.vishay.com
GS
32
4
= 4.5 V
125
150
40
5
3