sir836dp Vishay, sir836dp Datasheet - Page 4

• Manufacturer Part Number: sir836dp
• Description: N-channel 40-v D-s Mosfet
• Manufacturer: Vishay

SiR836DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.3
- 0.5
- 0.7
- 0.1
0.01
100
0.3
0.1
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
T
J
SD
0
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
0.6
50
T
75
J
0.8
= 25 °C
I
0.01
D
100
0.1
100
10
= 250 µA
1
0.1
I
1.0
D
* V
Single Pulse
Safe Operating Area, Junction-to-Ambient
= 5 mA
Limited by R
125
T
A
GS
= 25 °C
> minimum V
1.2
V
150
DS
- Drain-to-Source Voltage (V)
DS(on)
1
*
GS
at which R
BVDSS Limited
0.080
0.064
0.048
0.032
0.016
0.000
200
160
120
10
DS(on)
80
40
0
0
0 .
0
0
is specified
1
On-Resistance vs. Gate-to-Source Voltage
1
10 ms
100 ms
1 s
10 s
1 ms
DC
2
V
0.01
100
GS
Single Pulse Power
3
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
5
S10-0040-Rev. A, 11-Jan-10
Document Number: 65543
6
7
1
T
T
I
J
J
D
8
= 125 °C
= 25 °C
= 10 A
9
10
1
0