suf-8000 RF Micro Devices, suf-8000 Datasheet - Page 2

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suf-8000

Manufacturer Part Number
suf-8000
Description
Dc To 12 Ghz, Cascadable Phemt Mmic Amplifier
Manufacturer
RF Micro Devices
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUF-8000
Manufacturer:
TST
Quantity:
5 000
SUF-8000
Typical Performance (Probe Data with Bias Tees) V
2 of 6
Absolute Maximum Ratings
Total Current (l
Device Voltage (V
Power Dissipation
RF Input Power
Storage Temperature Range
Operating Temperature Range (T
Operating Junction Temperature (T
Operation of this device beyond any one of these limits may cause permanent dam-
Bias Conditions should also satisfy the following expression:
Note 1: 0 dBm/tone, 1 MHz tone spacing
Output 3rd Order Intercept Point (see note 1)
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
I
D
V
D
Output Power at 1 dB Compression
< (T
Parameter
J
- T
L
D
Output Return Loss
) / R
Input Return Loss
)
Small Signal Gain
Reverse Isolation
D
Parameter
)
Noise Figure
TH
, j-l and T
L
= Backside of die
L
)
J
)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
-65 to +150
-55 to +150
Rating
+150
0.38
+20
4.2
90
Units
dBm
dBm
dB
dB
dB
dB
dB
S
= 5 V, I
100 MHz
13.2
16.5
16.0
20.8
D
= 58 mA, R
Unit
dBm
mA
°C
°C
°C
W
V
1 GHz
13.1
31.1
15.6
16.9
15.4
20.1
4.3
BIAS
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EU Directive 2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
= 16.5 Ω, T = 25°C, Z = 50 Ω
3 GHz
Caution! ESD sensitive device.
12.8
30.9
15.5
17.3
14.7
20.1
4.1
6 GHz
12.3
29.3
14.7
21.0
13.8
19.6
4.2
9 GHz
11.2
27.8
13.9
23.4
13.6
19.4
4.5
EDS-106167 Rev B
12 GHz
10.1
25.6
12.0
14.5
14.7
19.3
5.2

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