rf5111 RF Micro Devices, rf5111 Datasheet - Page 8

• Manufacturer Part Number: rf5111
• Description: 3v Dcs Power Amplifier Rf5111
• Manufacturer: RF Micro Devices

RF5111
8 of 14
0.240" to improve the "off"
Distance between edge of
device and capacitor is
RF IN
isolation
33 pF
15 pF
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
V
1 nF
CC
15 pF
1
2
3
4
V
16
5
CC
APC
Application Schematic
15
6
15 pF
14
7
12 pF
Very close to
pin 15/16
13
8
V
15 pF
CC
Notes:
1. Using a hi-Q capacitor will increase efficiency slightly.
2. All capacitors are standard 0402 multi layer chip.
1.0 pF
12
11
10
9
Instead of a stripline,
an inductor of ~6 nH
can be used
edge of device and
capacitor is 0.080"
Distance between
15 pF
Quarter wave
5.1 pF
Note 1
50 Ω μstrip
length
V
CC
center of capacitors
Distance center to
Instead of a stripline, an
inductor of 2.2 nH can
0.220"
33 pF
be used
1.0 pF
Note 1
RF OUT
Rev A1 DS060921