ptvs12vs1utr NXP Semiconductors, ptvs12vs1utr Datasheet - Page 3

• Manufacturer Part Number: ptvs12vs1utr
• Description: High-temperature 400 W Transient Voltage Suppressor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Limiting values
PTVSXS1UTR_SER
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 6.
T
[1]
Table 7.
Symbol
P
I
I
T
Symbol
Standard
Per diode
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3B (human body model)
T
T
Per diode
V
PPM
FSM
amb
j
amb
stg
PPM
ESD
In accordance with IEC 61643-321 (10/1000 s current waveform).
For PTVS3V3S1UTR: P
Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses.
= 25

C unless otherwise specified.
Parameter
electrostatic discharge
voltage
Limiting values
ESD maximum ratings
ESD standards compliance
Parameter
rated peak pulse power
rated peak pulse current
non-repetitive peak forward
current
junction temperature
ambient temperature
storage temperature
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 October 2011
PPM
= 350 W
High-temperature 400 W Transient Voltage Suppressor
Conditions
IEC 61000-4-2; level 4
(contact discharge)
Conditions
single half-sine
wave; t
p
Conditions
> 15 kV (air); > 8 kV (contact)
> 8 kV
= 8.3 ms
PTVSxS1UTR series
[1][2]
[1]
-
Min
-
-
-
55
65
[1]
Min
-
185
Max
400
see
Table 9
and
50
+185
+185
© NXP B.V. 2011. All rights reserved.
10
Max
30
Unit
W
A
C
C
C
Unit
kV
3 of 12