ptvs12vs1utr NXP Semiconductors, ptvs12vs1utr Datasheet - Page 4

• Manufacturer Part Number: ptvs12vs1utr
• Description: High-temperature 400 W Transient Voltage Suppressor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
Table 9.
T
PTVSXS1UTR_SER
Product data sheet
Type
number
PTVSxxx
S1UTR
3V3
5V0
6V0
6V5
7V0
j
= 25

C unless otherwise specified.
Characteristics per type; PTVS3V3S1UTR to PTVS7V0S1UTR
Reverse
standoff
voltage
V
Max
3.3
5.0
6.0
6.5
7.0
RWM
(V)
Table 8.
[1]
[2]
[3]
[4]
Symbol
R
R
Breakdown voltage
V
I
Min
5.20
6.40
6.67
7.22
7.78
th(j-a)
th(j-sp)
R
BR
= 10 mA
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
Device mounted on a ceramic PCB, Al
Soldering point of cathode tab.
(V)
Typ
5.60
6.70
7.02
7.60
8.20
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
All information provided in this document is subject to legal disclaimers.
Max
6.00
7.00
7.37
7.98
8.60
Rev. 1 — 11 October 2011
Reverse leakage current
I
at V
Typ
5
5
5
5
3
RM
(A)
RWM
High-temperature 400 W Transient Voltage Suppressor
600
400
400
250
100
Max
2
O
3
, standard footprint.
Conditions
in free air
at V
T
Typ
17
17
17
17
9
j
PTVSxS1UTR series
= 150 C
RWM
8.0
9.2
10.3
11.2
12.0
Clamping
voltage V
Max
[1]
[2]
[3]
[4]
Min
-
-
-
-
CL
I
43.8
43.5
38.8
35.7
33.3
PPM
Typ
-
-
-
-
(V)
(A) Typ
© NXP B.V. 2011. All rights reserved.
2.5
3.2
3.6
4.3
Max
220
130
70
18
Temperature
coefficient
S
I
1.0
Z
Z
= 5 mA
(mV/K)
2
K/W
K/W
Unit
K/W
K/W
.
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