mrfe6s9130h Freescale Semiconductor, Inc, mrfe6s9130h Datasheet - Page 2

• Manufacturer Part Number: mrfe6s9130h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

MRFE6S9130HR3 MRFE6S9130HSR3
2
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Reverse Transfer Capacitance
Output Capacitance
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally input matched.
(V
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DS
GS
DS
DS
= 66 Vdc, V
= 28 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 5 Vdc, V
= 10 Vdc, I
DS
D
D
D
GS
GS
= 400 μAdc)
= 950 mAdc, Measured in Functional Test)
= 2.74 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
(1)
Characteristic
Test Methodology
(T
C
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 28 Vdc, I
Symbol
DQ
V
V
V
ACPR
I
I
I
C
DS(on)
C
GS(th)
GS(Q)
G
IRL
DSS
DSS
GSS
η
= 950 mA, P
oss
rss
ps
D
Min
out
—
—
—
—
—
—
18
29
—
—
1
2
= 27 W Avg. N - CDMA, f = 880 MHz,
- 47.6
0.22
19.2
30.5
1A (Minimum)
Typ
IV (Minimum)
- 29
2.1
2.9
1.6
A (Minimum)
66
—
—
—
Class
Freescale Semiconductor
Max
- 46
0.5
10
10
21
—
—
—
- 9
1
3
4
RF Device Data
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
dBc
dB
dB
pF
pF
%