mrfe6s9130h Freescale Semiconductor, Inc, mrfe6s9130h Datasheet - Page 6

• Manufacturer Part Number: mrfe6s9130h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

MRFE6S9130HR3 MRFE6S9130HSR3
6
−10
−20
−30
−40
−50
−60
0
1
Figure 7. Intermodulation Distortion Products
IM5 −L
IM3 −L
V
I
(f1 + f2)/2 = Center Frequency of 880 MHz
DQ
DD
= 950 mA, Two −Tone Measurements
= 28 Vdc, P
IM5 −U
IM3 −U
IM7 −L
versus Tone Spacing
TWO −TONE SPACING (MHz)
out
IM7 −U
= 130 W (PEP)
10
Figure 9. Single - Carrier N - CDMA ACPR, ALT1, Power
60
50
40
30
20
10
21
20
19
18
17
16
15
14
0
1
1
Gain and Drain Efficiency versus Output Power
V
N−CDMA IS−95, Pilot, Sync, Paging
Traffic Codes 8 Through 13
G
Figure 10. Power Gain and Drain Efficiency
DD
G
ps
ps
η
TYPICAL CHARACTERISTICS
= 28 Vdc, I
D
P
P
out
versus CW Output Power
DQ
out
, OUTPUT POWER (WATTS) CW
, OUTPUT POWER (WATTS) CW
= 950 mA, f = 880 MHz
T
C
60
= −30_C
85_C
25_C
10
10
ACPR
η
D
60
59
58
57
56
55
54
53
52
51
50
V
I
f = 880 MHz
DQ
DD
31
= 950 mA
= 28 Vdc
P1dB = 51.15 dBm
(130.31 W)
ALT1
Figure 8. Pulsed CW Output Power versus
P3dB = 52.26 dBm (168.27 W)
32
100
85_C
25_C
T
33
C
100
= −30_C
85_C
−30_C
25_C
P
in
34
, INPUT POWER (dBm)
200
400
V
12 μsec(on), 1% Duty Cycle, f = 880 MHz
Input Power
DD
−20
−30
−40
−50
−60
−70
−80
70
60
50
40
30
20
10
0
P6dB = 52.95 dBm (197.24 W)
35
= 28 Vdc, I
Freescale Semiconductor
36
DQ
= 950 mA, Pulsed CW
37
RF Device Data
38
Ideal
39
Actual
40