mrf9200l Freescale Semiconductor, Inc, mrf9200l Datasheet - Page 2

• Manufacturer Part Number: mrf9200l
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

2
MRF9200LR3 MRF9200LSR3
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz
Offset. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate- Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain- Source On - Voltage
Forward Transconductance
Reverse Transfer Capacitance
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
(V
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DS
GS
DS
DS
= 65 Vdc, V
= 26 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 26 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
DS
D
D
D
D
GS
GS
= 100 μAdc)
= 2400 mAdc)
= 6.0 Adc)
= 6.7 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
(1)
Characteristic
Test Conditions
(T
C
= 25°C unless otherwise noted)
GS
= 0 Vdc)
DD
= 26 Vdc, I
DQ
Symbol
V
V
V
ACPR
I
I
I
DS(on)
C
GS(th)
GS(Q)
G
GSS
= 2400 mA, P
IRL
DSS
DSS
g
η
rss
fs
ps
D
Min
1.5
out
—
—
—
—
—
—
16
22
—
—
3
= 40 W Avg. N - CDMA,
- 46.5
0.25
17.5
1C (Minimum)
Typ
IV (Minimum)
- 13
2.7
3.7
8.8
2.5
B (Minimum)
25
—
—
—
Class
Freescale Semiconductor
Max
3.5
4.5
0.4
- 45
10
—
—
—
—
- 9
1
1
RF Device Data
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
dBc
dB
dB
pF
%
S