mrf9200l Freescale Semiconductor, Inc, mrf9200l Datasheet - Page 7

• Manufacturer Part Number: mrf9200l
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
20
18
16
14
12
10
20
18
16
14
12
10
8
8
3
1
19
18
17
16
15
14
Figure 11. Power Gain and Drain Efficiency
Figure 12. Power Gain, Efficiency and IMD
0
G
V
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements, 100 kHz Tone Spacing
Figure 13. Power Gain versus Output Power
η
DD
ps
D
G
IMD
12 V
η
ps
= 26 Vdc, I
D
TYPICAL CHARACTERISTICS
P
P
versus CW Output Power
10
out
out
50
versus Output Power
, OUTPUT POWER (WATTS) PEP
, OUTPUT POWER (WATTS) CW
P
16 V
out
DQ
, OUTPUT POWER (WATTS) CW
10
= 1800 mA
100
20 V
150
100
24 V
100
V
I
f = 880 MHz
DQ
DD
I
f = 880 MHz
DQ
= 1800 mA
= 26 Vdc
26 V
200
= 1800 mA
V
DD
= 28 V
350
400
60
50
40
30
20
10
0
60
40
20
0
−20
−40
−60
250
MRF9200LR3 MRF9200LSR3
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