ma4e2502h-1246 Tyco Electronics, ma4e2502h-1246 Datasheet

ma4e2502h-1246

Manufacturer Part Number

ma4e2502h-1246

Description

Surmounttm Low, Medium And High Barrier Silicon Schottky Diodes

Manufacturer

Tyco Electronics

Datasheet

1.MA4E2502H-1246.pdf (4 pages)

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M/A-COM Inc. and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice. M/A-COM makes

no warranty, representation or guarantee regarding the suitability of its

products for any particular purpose, nor does M/A-COM assume any liability

whatsoever arising out of the use or application of any product(s) or

information.

SURMOUNT

Barrier Silicon Schottky Diodes

Features

Description and Applications

The MA4E2502 SurMount

Silicon Low, Medium, and High Barrier Schottky

Devices fabricated with the patented Heterolithic

Microwave Integrated Circuit (HMIC) process. HMIC

circuits consist of Silicon pedestals which form

diodes or via conductors embedded in a glass

dielectric, which acts as the low dispersion,

microstrip transmission medium. The combination of

silicon and glass allows HMIC devices to have

excellent loss and power dissipation characteristics

in a low profile, reliable device.

The Surmount Schottky devices are excellent

choices for circuits requiring the small parasitics of a

beam lead device coupled with the superior

mechanical performance of a chip. The SurMount

structure employs very low resistance silicon vias to

connect the Schottky contacts to the metalized

mounting pads on the bottom surface of the chip.

These devices are reliable, repeatable, and a lower

cost performance solution to conventional devices.

They have lower susceptibility to electrostatic

discharge than conventional beam lead Schottky

diodes.

The multi-layer metalization employed in the

fabrication of the Surmount Schottky junctions

includes a platinum diffusion barrier, which permits

all

non-operating stabilization bake at 300 C.

The “ 0502 ” outline allows for Surface Mount

placement and multi-functional polarity orientations.

Extremely Low Parasitic Capitance and

Inductance

Surface Mountable in Microwave Circuits, No

Wirebonds Required

Rugged HMIC Construction with Polyimide

Scratch Protection

Reliable, Multilayer Metalization with a Diffusion

Barrier, 100% Stabilization Bake (300 °C,

16 hours)

Lower Susceptibility to ESD Damage

devices

Low, Medium and High

subjected

Series Diodes are

16-hour

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macom.com for additional data sheets and product information.

Case Style 1246

The MA4E2502 Family of SurMount Schottky diodes

are recommended for use in microwave circuits

through Ku band frequencies for lower power

applications such as mixers, sub-harmonic mixers,

detectors and limiters. The HMIC construction

facilitates the direct replacement of more fragile

beam lead diodes with the corresponding Surmount

diode, which can be connected to a hard or soft

substrate circuit with solder.

D Sq.

Dim

0.0445

0.0169

0.0040

0.0128

Min.

Inches

0.0465

0.0189

0.0080

0.0148

A A

Max.

MA4E2502 Series

1.130

0.430

0.102

0.325

Min.

Millimeters

1.180

0.480

0.203

0.375

Max.

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ma4e2502h-1246 Summary of contents

Page 1

SURMOUNT Low, Medium and High TM Barrier Silicon Schottky Diodes Features Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required Rugged HMIC Construction with Polyimide Scratch Protection Reliable, Multilayer Metalization with a Diffusion Barrier, 100% ...

Page 2

... Frequency Range MA4E2502L Low GHz Barrier MA4E2502M Medium GHz Barrier MA4E2502H High GHz Barrier Rt is the dynamic slope resistance where Rj, where Idc (Idc is in mA) Handling All semiconductor chips should be handled with care to avoid damage or contamination from perspiration and skin oils ...

Page 3

... E-2 MA4E2502M Medium Barrier SPICE PARAMETERS (nA E-1 9.6 1.20 1.0 E-02 MA4E2502H High Barrier SPICE PARAMETERS (nA 5.7 E-1 6.5 1.20 1.0 E-02 Circuit Mounting Dimensions (Inches) 0.020 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its ...

Page 4

... SURMOUNT Low, Medium and High TM Barrier Silicon Schottky Diodes Ordering Information Part Number MA4E2502L-1246W MA4E2502L-1246 MA4E2502L-1246T MA4E2502M-1246W MA4E2502M-1246 MA4E2502M-1246T MA4E2502H-1246W MA4E2502H-1246 MA4E2502H-1246T MA4E2502 Diode Schematic Ls Schematic Values Model Number Ls (nH) MA4E2502L 0.8 MA4E2502M 0.8 MA4E2502H 0.8 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice ...

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