ma4e2502h-1246 Tyco Electronics, ma4e2502h-1246 Datasheet - Page 2

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ma4e2502h-1246

Manufacturer Part Number
ma4e2502h-1246
Description
Surmounttm Low, Medium And High Barrier Silicon Schottky Diodes
Manufacturer
Tyco Electronics
Datasheet

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Part Number:
MA4E2502H-1246
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2
1. Operation of this device above any one of these parameters
Absolute Maximum Ratings @ 25 °C
(Unless Otherwise Noted)
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
SURMOUNT
Barrier Silicon Schottky Diodes
Electrical Specifications @ 25 °C
Handling
All semiconductor chips should be handled with care
to avoid damage or contamination from perspiration
and skin oils. The use of plastic tipped tweezers or
vacuum pickups is strongly recommended for
individual components. The top surface of the die
has a protective polyimide coating to minimize
damage.
The rugged construction of these SurMount devices
allows the use of standard handling and die attach
techniques. It is important to note that industry
standard electrostatic discharge (ESD) control is
required at all times, due to the sensitive nature of
Schottky junctions.
Bulk handling should insure that abrasion and
mechanical shock are minimized.
may cause permanent damage.
Rt is the dynamic slope resistance where
Rt = Rs + Rj, where Rj = 26 / Idc (Idc is in mA)
RF & DC Dissipated Power
MA4E2502M
MA4E2502H
MA4E2502L
RF C.W. Incident Power
Operating Temperature
Number
Junction Temperature
Storage Temperature
Model
Reverse Voltage
Forward Current
Parameter
TM
Low, Medium and High
Medium
Barrier
Barrier
Barrier
Type
High
Low
Frequency Range
Recommended
DC - 18 GHz
DC - 18 GHz
DC - 18 GHz
1
Absolute Maximum
-40 °C to +125 °C
-40 °C to +150 °C
+ 20 dBm
+175 °C
50 mW
20 mA
5 V
Vf @ 1 mA
330 Max
470 Max
700 Max
300 Typ
420 Typ
650 Typ
( mV )
Vb @ 10 uA
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Die Bonding
Die attach for these devices is made simple through
the use of surface mount die attach technology.
Mounting pads are conveniently located on the
bottom surface of these devices, and are opposite
the active junction. The devices are well suited for
high temperature solder attachment onto hard
substrates. 80Au/20Sn and Sn63/Pb37 solders are
acceptable for usage. Die attach with Electrically
Conductive Silver Epoxy is Not Recommended.
For Hard substrates, we recommend utilizing a
vacuum tip and force of 60 to 100 grams applied
uniformly to the top surface of the device, using a
hot gas bonder with equal heat applied across the
bottom mounting pads of the device. When soldering
to soft substrates, it is recommended to use a
lead-tin interface at the circuit board mounting pads.
Position the die so that its mounting pads are
aligned with the circuit board mounting pads. Reflow
the solder paste by applying Equal heat to the circuit
at both die-mounting pads. The solder joint must Not
be made one at a time, creating un-equal heat flow
and thermal stress. Solder reflow should Not be
performed by causing heat to flow through the top
surface of the die. Since the HMIC glass is
transparent, the edges of the mounting pads can be
visually inspected through the die after die attach is
completed.
3 Min
5 Typ
3 Min
5 Typ
3 Min
5 Typ
( V )
0.12 Max
0.12 Max
0.12 Max
0.10 Typ
0.10 Typ
0.10 Typ
Ct @ 0V
( pF )
( Vf1 - Vf2 )/(10.5mA-9.5mA )
Rt Slope Resistance
MA4E2502 Series
20 Max
18 Max
15 Max
16 Typ
12 Typ
11 Typ
(
)
V5

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