sud50n03-10cp Vishay, sud50n03-10cp Datasheet
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sud50n03-10cp
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sud50n03-10cp Summary of contents
Page 1
... stg Symbol sec R thJA Steady State Steady State R thJC SUD50N03-10CP Vishay Siliconix D TrenchFETr Power MOSFETS D PWM Optimized for High Efficiency D Buck Converter – High Side – Low Side D Synchronous Rectifier – Secondary Rectifier N-Channel MOSFET Limit 30 " ...
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... SUD50N03-10CP Vishay Siliconix Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reversen Transfer Capacitance c Total Gate Charge c Gate-Source Charge c Gate-Drain Charge ...
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... 0.015 0.012 T = –55_C C 25_C 0.009 125_C 0.006 0.003 0.000 SUD50N03-10CP Vishay Siliconix Transfer Characteristics T = 125_C C 25_C –55_C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V – Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current – ...
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... SUD50N03-10CP Vishay Siliconix On-Resistance vs. Junction Temperature 2. 1.75 1.50 1.25 1.00 0.75 0.50 –50 – – Junction Temperature (_C) J Maximum Avalanche Drain Current vs. Ambient Temperature 100 T – Case Temperature (_C) A Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...
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... Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Document Number: 71791 S-05485—Rev. B, 21-Jan-02 New Product Normalized Thermal Transient Impedance, Junction-to-Case –2 10 Square Wave Pulse Duration (sec) SUD50N03-10CP Vishay Siliconix – www.vishay.com 5 ...